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  wuxi nce power co., ltd page v1.0 1 NCE30D0808J pb free product http://www.ncepower.com nce n-channel enhancement mode power mosfet description the NCE30D0808J uses advanced trench technology to provide excellent r ds(on) and low gate charge.this device is suitable for use as a load switch and pwm applications. genera features v ds = 30v,i d = 7.7a r ds(on) <25m ? @ v gs =10v r ds(on) <35m ? @ v gs =4.5v high power and current handing capability lead free product is acquired surface mount package application general purpose interfacing switch power management functions schematic diagram dfnwb2x2-6l bottom view package marking and ordering information device marking device device package reel size tape width quantity 0808 NCE30D0808J dfnwb2x2-6l - - - absolute maximum ratings (t c =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v drain current-continuous i d 7.7 a drain current-pulsed (note 1) i dm 31 a maximum power dissipation p d 2 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient note 2) r ja 62.5 /w electrical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 30 33 - v
wuxi nce power co., ltd page v1.0 2 NCE30D0808J pb free product http://www.ncepower.com parameter symbol condition min typ max unit zero gate voltage drain current i dss v ds =30v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 1 1.5 3 v v gs =10v, i d =7a - 22 25 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =5a - 28 34 m ? dynamic characteristics (note4) input capacitance c lss - 558 - pf output capacitance c oss - 72.7 - pf reverse transfer capacitance c rss v ds =15v,v gs =0v, f=1.0mhz - 62.6 - pf switching characteristics (note 4) turn-on delay time t d(on) - 2.4 - ns turn-on rise time t r - 2.5 - ns turn-off delay time t d(off) - 9 - ns turn-off fall time t f v dd =15v, r l =3 ? v gs =10v,r gen =3 ? - 2.5 - ns total gate charge q g - 12 - nc gate-source charge q gs - 1.7 - nc gate-drain charge q gd v ds =15v,i d =5a, v gs =10v - 3.2 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =7.7a - - 1.2 v diode forward current (note 2) i s - - 7.7 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production
wuxi nce power co., ltd page v1.0 3 NCE30D0808J pb free product http://www.ncepower.com typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit vds drain-source voltage (v) figure 3 output characteristics i d - drain current (a) figure 5 drain-source on-resistance v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms vgs gate-source voltage (v) figure 4 transfer characteristics t j -junction temperature( ) figure 6 drain-source on-resistance rdson on-resistance(m ) normalized on-resistance i d - drain current (a) i d - drain current (a)
wuxi nce power co., ltd page v1.0 4 NCE30D0808J pb free product http://www.ncepower.com vgs gate-source voltage (v) figure7 rdson vs vgs qg gate charge (nc) figure 9 gate charge vds drain-source voltage (v) figure 11 capacitance vs vds t j -junction temperature( ) figure 8 power dissipation vds drain-source voltage (v) figure 10 source- drain diode forward vds drain-source voltage (v) figure 12 safe operation area i d - drain current (a) i s - reverse drain current (a) vgs gate-source voltage (v) c capacitance (pf) rdson on-resistance(m ) p d power(w)
wuxi nce power co., ltd page v1.0 5 NCE30D0808J pb free product http://www.ncepower.com square wave pluse duration(sec) figure 13 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance
wuxi nce power co., ltd page v1.0 6 NCE30D0808J pb free product http://www.ncepower.com dfnwb2x2-6l package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 0.700 0.800 0.028 0.031 a1 0.000 0.050 0.000 0.002 a3 0.203ref. 0.008ref. d 1.900 2.100 0.075 0.083 e 1.900 2.100 0.075 0.083 d1 0.900 1.100 0.035 0.043 e1 0.520 0.720 0.020 0.028 b 0.250 0.350 0.010 0.014 e 0.650typ. 0.026typ. k 0.200min. 0.008min. l 0.200 0.300 0.008 0.012
wuxi nce power co., ltd page v1.0 7 NCE30D0808J pb free product http://www.ncepower.com attention: any and all nce power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit y, such as life-support systems, aircraft' s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your nce power representative nearest you before us ing any nce power products described or contained herein in such applications. nce power assumes no responsibility for equipment failu res that result from us ing products at values that exceed, even momentarily, rated values (such as maximum ratings, operati ng condition ranges, or other parameters) listed in products specifications of any and al l nce power products described or contained herein. specifications of any and all nce powe r products described or contained herein st ipulate the performance, characteristics, and functions of the described products in the independent state, and ar e not guarantees of the performance, characteristics, and functions of the described products as mounted in the custom er?s products or equipment. to verify symptoms and states that cannot be evaluated in an in dependent device, the customer s hould always evaluate and test devices mounted in the customer?s products or equipment. nce power semiconductor co.,ltd. strives to supply hi gh-quality high-reliability pr oducts. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures includ e but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be repr oduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieva l system, or otherwise, without the prior written permission of nce power semiconductor co.,ltd. information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. nce power believes information herein is accu rate and reliable, but no guar antees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specificati on" for the nce power product that you intend to use. this catalog provides information as of sep.2010. specific ations and information herein are subject to change without notice.


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